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1.发明申请METHOD FOR THE PREVENTION OF SUSPENDED SILICON STRUCTURE ETCHING DURING REACTIVE ION ETCHING 有权在反应离子蚀刻中防止悬浮硅结构蚀刻的方法公开(公告)号：US20150191350A1
公开(公告)日：2015-07-09
申请号：US14664967
申请日：2015-03-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ting-Hau Wu , Kuei-Sung Chang
IPC: B81C1/00 , H01L21/3065
CPC classification number: B81C1/00531 , B81B3/0018 , B81C1/00357 , B81C1/0038 , B81C1/00595 , B81C1/00801 , B81C2201/0112 , H01L21/3065 , H01L41/332
Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.
Abstract translation: 本发明涉及一种装置及其制造方法，其中在悬挂体下方形成保护区域。 保护区域允许体硅体的深反应离子蚀刻以形成MEMS器件，而不会遇到由DRIE工艺的过蚀刻期间的氧化物的后向散射引起的对由硅造成的损坏的各种问题。
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2.发明授权Method for the prevention of suspended silicon structure etching during reactive ion etching 有权在反应离子蚀刻期间防止悬浮硅结构蚀刻的方法公开(公告)号：US08987845B2
公开(公告)日：2015-03-24
申请号：US13673223
申请日：2012-11-09
Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
Inventor： Ting-Hau Wu , Kuei-Sung Chang
CPC classification number: B81C1/00531 , B81B3/0018 , B81C1/00357 , B81C1/0038 , B81C1/00595 , B81C1/00801 , B81C2201/0112 , H01L21/3065 , H01L41/332
Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.
Abstract translation: 本发明涉及一种装置及其制造方法，其中在悬挂体下方形成保护区域。 保护区域允许体硅体的深反应离子蚀刻以形成MEMS器件，而不会遇到由DRIE工艺的过蚀刻期间的氧化物的后向散射引起的对由硅造成的损坏的各种问题。
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3.发明申请Method for the Prevention of Suspended Silicon Structure Etching During Reactive Ion Etching 有权在反应离子蚀刻期间防止悬浮硅结构蚀刻的方法公开(公告)号：US20140131818A1
公开(公告)日：2014-05-15
申请号：US13673223
申请日：2012-11-09
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
Inventor： Ting-Hau Wu , Kuei-Sung Chang
IPC: H01L41/113 , H01L41/332
CPC classification number: B81C1/00531 , B81B3/0018 , B81C1/00357 , B81C1/0038 , B81C1/00595 , B81C1/00801 , B81C2201/0112 , H01L21/3065 , H01L41/332
Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.
Abstract translation: 本发明涉及一种装置及其制造方法，其中在悬挂体下方形成保护区域。 保护区域允许体硅体的深反应离子蚀刻以形成MEMS器件，而不会遇到由DRIE工艺的过蚀刻期间的氧化物的后向散射引起的对由硅造成的损坏的各种问题。
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4.发明授权Method for the prevention of suspended silicon structure etching during reactive ion etching 有权在反应离子蚀刻期间防止悬浮硅结构蚀刻的方法公开(公告)号：US09156685B2
公开(公告)日：2015-10-13
申请号：US14664967
申请日：2015-03-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ting-Hau Wu , Kuei-Sung Chang
IPC: H01L21/30 , H01L21/46 , B81C1/00 , H01L21/3065
CPC classification number: B81C1/00531 , B81B3/0018 , B81C1/00357 , B81C1/0038 , B81C1/00595 , B81C1/00801 , B81C2201/0112 , H01L21/3065 , H01L41/332
Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.
Abstract translation: 本发明涉及一种装置及其制造方法，其中在悬挂体下方形成保护区域。 保护区域允许体硅体的深反应离子蚀刻以形成MEMS器件，而不会遇到由DRIE工艺的过蚀刻期间的氧化物的后向散射引起的对由硅造成的损坏的各种问题。
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