Invention Grant
US08994128B2 Micro-electromechanical semiconductor comprising stress measuring element and stiffening braces separating wall depressions 有权
微机电半导体包括应力测量元件和分隔壁凹的加强支架

  • Patent Title: Micro-electromechanical semiconductor comprising stress measuring element and stiffening braces separating wall depressions
  • Patent Title (中): 微机电半导体包括应力测量元件和分隔壁凹的加强支架
  • Application No.: US13521158
    Application Date: 2011-01-10
  • Publication No.: US08994128B2
    Publication Date: 2015-03-31
  • Inventor: Arnd Ten Have
  • Applicant: Arnd Ten Have
  • Applicant Address: DE Dortmund
  • Assignee: ELMOS Semiconductor AG
  • Current Assignee: ELMOS Semiconductor AG
  • Current Assignee Address: DE Dortmund
  • Agency: Shumaker & Sieffert, P.A.
  • Priority: EP10150405 20100111
  • International Application: PCT/EP2011/050209 WO 20110110
  • International Announcement: WO2011/083158 WO 20110714
  • Main IPC: G01L9/00
  • IPC: G01L9/00 B81B3/00 B81C1/00
Micro-electromechanical semiconductor comprising stress measuring element and stiffening braces separating wall depressions
Abstract:
The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.
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