Invention Grant
- Patent Title: Method for fabricating emitter
- Patent Title (中): 制造发射体的方法
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Application No.: US14278760Application Date: 2014-05-15
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Publication No.: US08999178B2Publication Date: 2015-04-07
- Inventor: Yasuhiko Sugiyama , Kazuo Aita , Fumio Aramaki , Tomokazu Kozakai , Osamu Matsuda , Anto Yasaka
- Applicant: Hitachi High-Tech Science Corporation
- Applicant Address: JP
- Assignee: Hitachi High-Tech Science Corporation
- Current Assignee: Hitachi High-Tech Science Corporation
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2012-068032 20120323
- Main IPC: C25F3/00
- IPC: C25F3/00 ; H01J27/02 ; H01J9/02 ; H01J1/15 ; H01J1/304 ; H01J9/04 ; H01J37/08 ; H01J37/305 ; H01J37/26

Abstract:
A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.
Public/Granted literature
- US20140246397A1 METHOD FOR FABRICATING EMITTER Public/Granted day:2014-09-04
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