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    Focused ion beam apparatus with precious metal emitter surface
    3.
    发明授权
    Focused ion beam apparatus with precious metal emitter surface 有权
    聚焦离子束设备，具有贵金属发射体表面

    公开(公告)号：US09336979B2

    公开(公告)日：2016-05-10

    申请号：US14591843

    申请日：2015-01-07

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

    IPC: H01J27/02 ,  H01J37/08 ,  H01J37/305 ,  H01J27/26

    CPC classification number: H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/182

    Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

    Abstract translation: 聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。 发射体的表面由贵金属形成，例如铂，钯，铱，铑或金。 气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面。 提取电极与发射极间隔开，并向提取电极施加电压，使吸附的氮气离子化，并以离子束形式提取氮离子。 温度控制单元控制发射器的温度。

    Method for fabricating emitter
    4.
    发明授权
    Method for fabricating emitter 有权
    制造发射体的方法

    公开(公告)号：US08999178B2

    公开(公告)日：2015-04-07

    申请号：US14278760

    申请日：2014-05-15

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Anto Yasaka

    IPC: C25F3/00 ,  H01J27/02 ,  H01J9/02 ,  H01J1/15 ,  H01J1/304 ,  H01J9/04 ,  H01J37/08 ,  H01J37/305 ,  H01J37/26

    CPC classification number: H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

    Abstract translation: 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。

    Focused ion beam apparatus and control method thereof
    6.
    发明授权
    Focused ion beam apparatus and control method thereof 有权
    聚焦离子束装置及其控制方法

    公开(公告)号：US09418817B2

    公开(公告)日：2016-08-16

    申请号：US14218020

    申请日：2014-03-18

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Fumio Aramaki ,  Yasuhiko Sugiyama ,  Hiroshi Oba

    IPC: H01J37/08

    CPC classification number: H01J37/08 ,  H01J2237/002 ,  H01J2237/0807

    Abstract: A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for cooling and heating, respectively, the emitter, and an ion source gas supply section for supplying to the ion source chamber an ion source gas that is exchangeable with another ion source gas. A control section controls an operation of the cooling unit such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature higher than a temperature at which the ion source gas before and after the exchange freezes. The control section controls an operation of the heater so that the emitter is temporarily heated to release the ion source gas from a surface of the emitter before the ion source gas is exchanged with the other ion source gas.

    Abstract translation: 聚焦离子束装置具有用于发射离子束的发射体，容纳发射体的离子源室，分别用于冷却和加热发光体的冷却单元和加热单元，以及用于向 离子源室可与另一离子源气体交换的离子源气体。 控制部控制冷却单元的动作，使得与离子源室中的离子源气体接触的壁面的温度保持在比交换前后的离子源气体冻结的温度高的温度。 控制部分控制加热器的操作，使得在将离子源气体与其它离子源气体交换之前，发射体被暂时加热以从发射器的表面释放离子源气体。

    Method for acquiring image and ion beam apparatus
    7.
    发明授权
    Method for acquiring image and ion beam apparatus 有权

    公开(公告)号：US10276343B2

    公开(公告)日：2019-04-30

    申请号：US15982175

    申请日：2018-05-17

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Tomokazu Kozakai ,  Fumio Aramaki ,  Osamu Matsuda ,  Kensuke Shiina ,  Kazuo Aita ,  Anto Yasaka

    IPC: H01J37/22 ,  H01J37/20 ,  H01J37/28 ,  H01J37/147

    Abstract: A method of acquiring an image of an image acquiring region of a sample comprises a first step of irradiating and scanning an ion beam in a first scan pattern on a first scan region of a sample, the scan region including therein the image acquiring region, and a second step of detecting secondary charged particles generated by irradiating and scanning the ion beam on the first scan region of the sample and generating first image data of the image acquiring region. The first and second steps are repeated a plurality of times using different scan patterns on different scan regions that differ from the first scan and the first scan region and from one another, each of the different scan regions including therein the image acquiring region, to generate a plurality of image data of the image acquiring region. Image data of the image acquiring region are generated by synthesizing all the image data generated by scanning the different scan region, and the synthesized image data of the image acquiring region are displayed on a display unit.

    Repair apparatus
    9.
    发明授权
    Repair apparatus 有权
    维修设备

    公开(公告)号：US09378858B2

    公开(公告)日：2016-06-28

    申请号：US14466524

    申请日：2014-08-22

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

    IPC: G21K1/14 ,  G21K5/04 ,  H01J37/305 ,  H01J37/08

    CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

    Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

    Abstract translation: 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。

    Method for fabricating emitter
    10.
    发明授权
    Method for fabricating emitter 有权
    制造发射体的方法

    公开(公告)号：US08764994B2

    公开(公告)日：2014-07-01

    申请号：US13845630

    申请日：2013-03-18

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Anto Yasaka

    IPC: B44C1/22 ,  C25F3/00

    CPC classification number: H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

    Abstract translation: 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。

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