Invention Grant
US08999621B2 Pattern forming method, chemical amplification resist composition and resist film
有权
图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
- Patent Title: Pattern forming method, chemical amplification resist composition and resist film
- Patent Title (中): 图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
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Application No.: US13390847Application Date: 2010-10-05
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Publication No.: US08999621B2Publication Date: 2015-04-07
- Inventor: Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- Applicant: Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-232706 20091006; JP2009-285584 20091216
- International Application: PCT/JP2010/067808 WO 20101005
- International Announcement: WO2011/043481 WO 20110414
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/30 ; G03F7/039 ; G03F7/20 ; G03F7/32
Abstract:
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
Public/Granted literature
- US20120148957A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM Public/Granted day:2012-06-14
Information query
IPC分类:
