Invention Grant
- Patent Title: Manufacturing process of memory cells
- Patent Title (中): 记忆细胞的制造过程
-
Application No.: US14074059Application Date: 2013-11-07
-
Publication No.: US08999796B2Publication Date: 2015-04-07
- Inventor: Philippe Boivin
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1260574 20121108
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/66 ; H01L27/112 ; H01L27/105 ; H01L21/28 ; H01L29/423 ; H01L29/788 ; H01L29/792 ; H01L21/283 ; H01L21/768
Abstract:
A method for fabricating at least one cell of a semiconducting component includes positioning a first conducting polysilicon-type layer on a substrate, above an insulating oxide-type layer. The production of at least one trench within the first conducting layer is included to form two electrically unlinked distinct conducting parts intended to form two transistor gates of respectively two distinct twin cells.
Public/Granted literature
- US20140127873A1 MANUFACTURING PROCESS OF MEMORY CELLS Public/Granted day:2014-05-08
Information query
IPC分类:
