Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US13244948Application Date: 2011-09-26
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Publication No.: US09000568B2Publication Date: 2015-04-07
- Inventor: Szu-Hao Lai , Yu-Ren Wang , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Te-Lin Sun
- Applicant: Szu-Hao Lai , Yu-Ren Wang , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Te-Lin Sun
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/28 ; H01L29/66
Abstract:
A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.
Public/Granted literature
- US20130075874A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2013-03-28
Information query
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