Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US14042976Application Date: 2013-10-01
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Publication No.: US09000569B2Publication Date: 2015-04-07
- Inventor: Chin-Tang Hsieh , You-Ming Hsu , Ming-Sheng Liu , Chih-Ping Wang
- Applicant: Chipbond Technology Corporation
- Applicant Address: TW Hsinchu
- Assignee: Chipbond Technology Corporation
- Current Assignee: Chipbond Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jackson IPG PLLC
- Priority: TW102132529A 20130910
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/00 ; H01L23/28 ; H01L23/532 ; H01L23/31
Abstract:
A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.
Public/Granted literature
- US20150069584A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2015-03-12
Information query
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