Invention Grant
- Patent Title: Method of forming semiconductor device having metal gate
- Patent Title (中): 形成具有金属栅极的半导体器件的方法
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Application No.: US14302047Application Date: 2014-06-11
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Publication No.: US09006091B2Publication Date: 2015-04-14
- Inventor: Shih-Hung Tsai , Ssu-I Fu , Ying-Tsung Chen , Chih-Wei Chen , Chien-Ting Lin , Wen-Tai Chiang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/66 ; H01L21/283 ; H01L21/28 ; H01L21/762 ; H01L29/78 ; H01L29/51
Abstract:
A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally formed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench.
Public/Granted literature
- US20140295660A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2014-10-02
Information query
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