Invention Grant
- Patent Title: Semiconductor device manufacturing methods and methods of forming insulating material layers
- Patent Title (中): 形成绝缘材料层的半导体器件制造方法和方法
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Application No.: US13212834Application Date: 2011-08-18
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Publication No.: US09006802B2Publication Date: 2015-04-14
- Inventor: Gin-Chen Huang , Tsai-Fu Hsiao , Ching-Hong Jiang , Neng-Kuo Chen , Hongfa Luan , Sey-Ping Sun , Clement Hsingjen Wann
- Applicant: Gin-Chen Huang , Tsai-Fu Hsiao , Ching-Hong Jiang , Neng-Kuo Chen , Hongfa Luan , Sey-Ping Sun , Clement Hsingjen Wann
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L29/66
Abstract:
Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.
Public/Granted literature
- US20130043512A1 Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers Public/Granted day:2013-02-21
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