Invention Grant
- Patent Title: Alteration of graphene defects
- Patent Title (中): 改变石墨烯缺陷
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Application No.: US13391158Application Date: 2011-09-16
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Publication No.: US09011968B2Publication Date: 2015-04-21
- Inventor: Seth Miller , Thomas Yager
- Applicant: Seth Miller , Thomas Yager
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development LLC
- Current Assignee: Empire Technology Development LLC
- Current Assignee Address: US DE Wilmington
- Agency: Moritt Hock & Hamroff LLP
- Agent Steven S. Rubin, Esq.
- International Application: PCT/US2011/051893 WO 20110916
- International Announcement: WO2013/039508 WO 20130321
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C01B31/04 ; B05C3/20 ; B05C3/00 ; B32B3/10 ; B32B9/04

Abstract:
Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also include reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas. The methods may further include adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer. The methods may further include reducing the graphene oxide layer to produce at least one altered defect area in the layer.
Public/Granted literature
- US20130071616A1 ALTERATION OF GRAPHENE DEFECTS Public/Granted day:2013-03-21
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