Invention Grant
- Patent Title: Semiconductor structure and process thereof
- Patent Title (中): 半导体结构及其工艺
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Application No.: US14054811Application Date: 2013-10-15
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Publication No.: US09013024B2Publication Date: 2015-04-21
- Inventor: Ying-Chih Lin , Hsuan-Hsu Chen , Jiunn-Hsiung Liao , Lung-En Kuo
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/311 ; H01L21/308 ; H01L21/84 ; H01L27/12 ; H01L29/78
Abstract:
A semiconductor structure includes a substrate, a recess and a material. The recess is located in the substrate, wherein the recess has an upper part and a lower part. The minimum width of the upper part is larger than the maximum width of the lower part. The material is located in the recess.
Public/Granted literature
- US20140038417A1 SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF Public/Granted day:2014-02-06
Information query
IPC分类:
