Invention Grant
US09023432B2 Resist material for imprinting, pattern formation method, and imprinting apparatus
有权
抗蚀材料用于印记，图案形成方法和压印装置
- Patent Title: Resist material for imprinting, pattern formation method, and imprinting apparatus
- Patent Title (中): 抗蚀材料用于印记，图案形成方法和压印装置
-
Application No.: US13424677Application Date: 2012-03-20
-
Publication No.: US09023432B2Publication Date: 2015-05-05
- Inventor: Daisuke Kawamura
- Applicant: Daisuke Kawamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2011-190959 20110901
- Main IPC: C08J7/04
- IPC: C08J7/04 ; B05D3/12 ; B05D3/06 ; G03F7/00 ; C09D133/08 ; B82Y10/00 ; B82Y40/00
Abstract:
According to one embodiment, an resist material for imprinting comprises a first resin component nonvolatile at a substrate on which to form an imprinting pattern, a second resin component volatile at the substrate, and a coupling reaction initiator that promotes curing of the first resin component.
Public/Granted literature
- US20130059090A1 RESIST MATERIAL FOR IMPRINTING, PATTERN FORMATION METHOD, AND IMPRINTING APPARATUS Public/Granted day:2013-03-07
Information query
