Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US13964184Application Date: 2013-08-12
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Publication No.: US09024416B2Publication Date: 2015-05-05
- Inventor: Chun-Hung Chen , Ming-Tse Lin , Chien-Li Kuo , Kuei-Sheng Wu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/00 ; H01L23/60 ; H01L49/02 ; H01L23/14 ; H01L23/498 ; H01L23/64 ; H01L23/522
Abstract:
A semiconductor structure is provided. The semiconductor structure includes an interposer structure. The interposer structure includes an interposer substrate, a ground, through vias, a dielectric layer, and an inductor. The through vias are formed in the interposer substrate and electrically connected to the ground. The dielectric layer is on the interposer substrate. The inductor is on the dielectric layer.
Public/Granted literature
- US20150041952A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2015-02-12
Information query
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