Invention Grant
- Patent Title: GaN vertical superjunction device structures and fabrication methods
- Patent Title (中): GaN垂直超导装置结构及制造方法
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Application No.: US14302270Application Date: 2014-06-11
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Publication No.: US09029210B2Publication Date: 2015-05-12
- Inventor: Hui Nie , Andrew P. Edwards , Donald R. Disney , Isik C. Kizilyalli
- Applicant: AVOGY, INC.
- Applicant Address: US CA San Jose
- Assignee: AVOGY, INC.
- Current Assignee: AVOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8252 ; H01L27/06 ; H01L29/778 ; H01L29/06
Abstract:
A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.
Public/Granted literature
- US20140295652A1 GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS Public/Granted day:2014-10-02
Information query
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