Method for forming semiconductor structure

Invention Grant

US09029265B2 Method for forming semiconductor structure 有权

Title translation: 半导体结构形成方法

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Patent Title: Method for forming semiconductor structure
Patent Title (中): 半导体结构形成方法
Application No.: US14053696

Application Date: 2013-10-15
Publication No.: US09029265B2

Publication Date: 2015-05-12
Inventor: Sun-Hoi Goh , Seng-Wah Liau , Zhen-Zhen Wang
Applicant: United Microelectronics Corp.
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: WPAT, PC
Agent Justin King
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/308 ; H01L21/3105

Method for forming semiconductor structure

Abstract:

A method for forming a semiconductor structure. A dielectric layer including adjacent first and second dielectric regions is formed on a substrate. The dielectric layer includes a curable material. The first dielectric region is cured. A portion of the second dielectric region is etched to form an opening and leave a remaining portion of the second dielectric region. After the etching step, the remaining portion of the second dielectric region is cured.

Abstract(Chinese):

一种形成半导体结构的方法。在基板上形成包括相邻的第一和第二介质区域的电介质层。电介质层包括可固化材料。第一电介质区域被固化。蚀刻第二电介质区域的一部分以形成开口并留下第二电介质区域的剩余部分。在蚀刻步骤之后，第二电介质区域的剩余部分被固化。

Public/Granted literature

US20150104943A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2015-04-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀