Invention Grant
US09041140B2 Grids in backside illumination image sensor chips and methods for forming the same
有权
背面照明图像传感器芯片中的栅格及其形成方法
- Patent Title: Grids in backside illumination image sensor chips and methods for forming the same
- Patent Title (中): 背面照明图像传感器芯片中的栅格及其形成方法
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Application No.: US13420847Application Date: 2012-03-15
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Publication No.: US09041140B2Publication Date: 2015-05-26
- Inventor: Shiu-Ko JangJian , Min Hao Hong , Ting-Chun Wang , Chung-Ren Sun
- Applicant: Shiu-Ko JangJian , Min Hao Hong , Ting-Chun Wang , Chung-Ren Sun
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/146

Abstract:
A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
Public/Granted literature
- US20130241018A1 Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same Public/Granted day:2013-09-19
Information query
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