Invention Grant
- Patent Title: Method of forming light-emitting diode
- Patent Title (中): 形成发光二极管的方法
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Application No.: US14196708Application Date: 2014-03-04
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Publication No.: US09048345B2Publication Date: 2015-06-02
- Inventor: Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsin-Ying Wang
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02
Abstract:
A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.
Public/Granted literature
- US20140295588A1 METHOD OF FORMING LIGHT-EMITTING DIODE Public/Granted day:2014-10-02
Information query
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