Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
- Patent Title (中): 辐射发射半导体芯片
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Application No.: US13123421Application Date: 2009-10-29
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Publication No.: US09054016B2Publication Date: 2015-06-09
- Inventor: Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
- Applicant: Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102008059580 20081128; DE102009006177 20090126
- International Application: PCT/DE2009/001524 WO 20091029
- International Announcement: WO2010/060404 WO 20100603
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L25/16 ; H01L33/08 ; H01L33/38

Abstract:
A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
Public/Granted literature
- US20110260205A1 RADIATION-EMITTING SEMICONDUCTOR CHIP Public/Granted day:2011-10-27
Information query
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