Invention Grant
- Patent Title: Process for controlling shallow trench isolation step height
- Patent Title (中): 控制浅沟槽隔离台阶高度的工艺
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Application No.: US12478135Application Date: 2009-06-04
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Publication No.: US09054025B2Publication Date: 2015-06-09
- Inventor: Su-Chen Lai , Kong-Beng Thei , Harry Chuang , Gary Shen , Shun-Jang Liao
- Applicant: Su-Chen Lai , Kong-Beng Thei , Harry Chuang , Gary Shen , Shun-Jang Liao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/762
Abstract:
A method for fabricating an integrated circuit with improved uniformity among the step heights of isolation regions is disclosed. The method comprises providing a substrate having one or more trenches; filling the one or more trenches; performing a chemical mechanical polishing on the one or more filled trenches, wherein each of the one or more filled trenches comprises a thickness; measuring the thickness of each of the one or more filled trenches; determining, based on the measured thickness of each of the one or more filled trenches, an amount of time to perform an etching process; and performing the etching process for the determined amount of time.
Public/Granted literature
- US20100112732A1 NOVEL PROCESS FOR CONTROLLING SHALLOW TRENCH ISOLATION STEP HEIGHT Public/Granted day:2010-05-06
Information query
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