Low-K dielectric layer and porogen

Invention Grant

US09054110B2 Low-K dielectric layer and porogen 有权

Title translation: 低K电介质层和致孔剂

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Patent Title: Low-K dielectric layer and porogen
Patent Title (中): 低K电介质层和致孔剂
Application No.: US13204507

Application Date: 2011-08-05
Publication No.: US09054110B2

Publication Date: 2015-06-09
Inventor: Joung-Wei Liou , Hui-Chun Yang , Yu-Yun Peng , Keng-Chu Lin
Applicant: Joung-Wei Liou , Hui-Chun Yang , Yu-Yun Peng , Keng-Chu Lin
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/532 ; H01L21/768 ; H01L21/02

Abstract:

A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.

Abstract(Chinese):

提供了一种用于低k电介质层的系统和方法。优选的实施方案包括形成基质并在基质内形成致孔剂。致孔剂包括具有少于15个碳原子和大量单键的有机环结构。此外，致孔剂可能具有大于1.3的粘度和小于0.5的雷诺数。

Public/Granted literature

US20130032955A1 Low-K Dielectric Layer and Porogen Public/Granted day:2013-02-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）