Invention Grant
- Patent Title: Film formation apparatus and film formation method
- Patent Title (中): 成膜装置及成膜方法
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Application No.: US13716113Application Date: 2012-12-15
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Publication No.: US09055654B2Publication Date: 2015-06-09
- Inventor: Shunpei Yamazaki , Shingo Eguchi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-280793 20111222
- Main IPC: H05B33/10
- IPC: H05B33/10

Abstract:
A film formation apparatus with which a deposited film to cover a deposition object having a three-dimensional curved surface can be formed and a method of forming a deposited film to cover a three-dimensional curved surface. The film formation apparatus includes a deposition source having deposition directivity, a deposition-source-moving mechanism which moves the deposition source, a deposition-object-holding mechanism which holds a deposition object having a three-dimensional curved surface, a deposition-direction-changing mechanism which changes the deposition direction, and a control portion which controls the deposition-source-moving mechanism and the deposition-direction-changing mechanism.
Public/Granted literature
- US20130164437A1 Film Formation Apparatus and Film Formation Method Public/Granted day:2013-06-27
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