Invention Grant
US09061317B2 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
孔原子,孔隙前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
Abstract:
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.
Information query
Patent Agency Ranking
0/0