Invention Grant
- Patent Title: Single package dual channel memory with co-support
- Patent Title (中): 单包双通道内存共同支持
-
Application No.: US14075020Application Date: 2013-11-08
-
Publication No.: US09070423B2Publication Date: 2015-06-30
- Inventor: Richard Dewitt Crisp , Yong Chen , Belgacem Haba , Wael Zohni , Zhuowen Sun
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C5/02 ; G11C8/00 ; G11C8/18 ; H01L23/00 ; H01L25/065 ; G11C5/04 ; G11C5/06 ; G11C8/12 ; H01L23/538

Abstract:
A microelectronic package can include a support element having first and second surfaces and substrate contacts at the first or second surface, zeroth and first stacked microelectronic elements electrically coupled with the substrate contacts, and terminals at the second surface electrically coupled with the microelectronic elements. The second surface can have a southwest region encompassing entire lengths of south and west edges of the second surface and extending in orthogonal directions from the south and west edges one-third of each distance toward north and east edges of the second surface, respectively. The terminals can include first terminals at a southwest region of the second surface, the first terminals configured to carry address information usable by circuitry within the microelectronic package to determine an addressable memory location from among all the available addressable memory locations of the memory storage arrays of at least one of the zeroth or first microelectronic elements.
Public/Granted literature
- US20140362629A1 SINGLE PACKAGE DUAL CHANNEL MEMORY WITH CO-SUPPORT Public/Granted day:2014-12-11
Information query