Invention Grant
- Patent Title: SCR component with temperature-stable characteristics
- Patent Title (中): SCR组件具有温度稳定特性
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Application No.: US14494692Application Date: 2014-09-24
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Publication No.: US09070738B2Publication Date: 2015-06-30
- Inventor: Samuel Menard
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1359295 20130926
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/16 ; H01L29/66 ; H01L21/02 ; H01L21/322 ; H01L29/08 ; H01L21/306
Abstract:
An SCR-type component of vertical structure has a main upper electrode formed on a silicon region of a first conductivity type which is formed in a silicon layer of a second conductivity type. The silicon region is interrupted in first areas where the material of the silicon layer comes into contact with the upper electrode, and is further interrupted in second areas filled with resistive porous silicon extending between the silicon layer and the main upper electrode.
Public/Granted literature
- US20150084094A1 SCR COMPONENT WITH TEMPERATURE-STABLE CHARACTERISTICS Public/Granted day:2015-03-26
Information query
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