Invention Grant
US09096726B2 Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
有权
用于形成二氧化硅基绝缘层的组合物，用于形成二氧化硅基绝缘层的组合物的制造方法，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
- Patent Title: Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
- Patent Title (中): 用于形成二氧化硅基绝缘层的组合物，用于形成二氧化硅基绝缘层的组合物的制造方法，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
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Application No.: US13339728Application Date: 2011-12-29
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Publication No.: US09096726B2Publication Date: 2015-08-04
- Inventor: Sang-Hak Lim , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
- Applicant: Sang-Hak Lim , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
- Applicant Address: KR Gumi-si, Kyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Kyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0001802 20110107
- Main IPC: B05D3/02
- IPC: B05D3/02 ; C08G77/54 ; H01L21/02 ; H01L49/02
Abstract:
A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:
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