Invention Grant
- Patent Title: Selective nanotube growth inside vias using an ion beam
- Patent Title (中): 使用离子束的通孔内的选择性纳米管生长
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Application No.: US12549929Application Date: 2009-08-28
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Publication No.: US09099537B2Publication Date: 2015-08-04
- Inventor: Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
- Applicant: Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: C23C14/14
- IPC: C23C14/14 ; H01L21/768 ; H01J37/305 ; H01J37/304 ; H01L23/532
Abstract:
A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
Public/Granted literature
- US20110048930A1 SELECTIVE NANOTUBE GROWTH INSIDE VIAS USING AN ION BEAM Public/Granted day:2011-03-03
Information query
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