- Patent Title: Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
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Application No.: US14333536Application Date: 2014-07-17
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Publication No.: US09102693B2Publication Date: 2015-08-11
- Inventor: Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
- Applicant: Entegris, Inc.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Agency: Hulquist, PLLC
- Agent Steven J. Hultquist; Maggie Chappuis
- Main IPC: C07F7/10
- IPC: C07F7/10 ; H01L21/02
Abstract:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
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