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公开(公告)号：US09102693B2
公开(公告)日：2015-08-11
申请号：US14333536
申请日：2014-07-17
Applicant: Entegris, Inc.
Inventor： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
CPC classification number: C07F7/10 , H01L21/02271
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
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2.发明申请公开(公告)号：US20150315215A1
公开(公告)日：2015-11-05
申请号：US14798775
申请日：2015-07-14
Applicant: Entegris, Inc.
Inventor： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
CPC classification number: C07F7/10 , H01L21/02271
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。
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3.发明申请公开(公告)号：US20140329011A1
公开(公告)日：2014-11-06
申请号：US14333536
申请日：2014-07-17
Applicant: Entegris, Inc.
Inventor： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
CPC classification number: C07F7/10 , H01L21/02271
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。
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公开(公告)号：US09783558B2
公开(公告)日：2017-10-10
申请号：US14798775
申请日：2015-07-14
Applicant: Entegris, Inc.
Inventor： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
CPC classification number: C07F7/10 , H01L21/02271
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
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