Invention Grant
- Patent Title: Epitaxial stucture
- Patent Title (中): 外延结构
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Application No.: US13713512Application Date: 2012-12-13
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Publication No.: US09105484B2Publication Date: 2015-08-11
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210122568 20120425
- Main IPC: H01L29/201
- IPC: H01L29/201 ; H01L33/00 ; H01L29/06 ; H01L29/16 ; H01L21/02 ; H01L29/778

Abstract:
An epitaxial structure includes a patterned epitaxial growth surface defining a plurality of grooves. A graphene layer covers the patterned epitaxial growth surface. An epitaxial layer is formed on the patterned epitaxial growth surface, wherein a first part of the graphene layer is sandwiched between the substrate, and a second part of the graphene layer is embedded into the epitaxial layer.
Public/Granted literature
- US20130285213A1 EPITAXIAL STUCTURE Public/Granted day:2013-10-31
Information query
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