Invention Grant
US09117886B2 Method for fabricating a semiconductor device by forming and removing a dummy gate structure
有权
通过形成和去除虚拟栅极结构来制造半导体器件的方法
- Patent Title: Method for fabricating a semiconductor device by forming and removing a dummy gate structure
- Patent Title (中): 通过形成和去除虚拟栅极结构来制造半导体器件的方法
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Application No.: US14091349Application Date: 2013-11-27
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Publication No.: US09117886B2Publication Date: 2015-08-25
- Inventor: Ching-Ling Lin , Chih-Sen Huang , Jia-Rong Wu , Ching-Wen Hung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/44 ; H01L21/768 ; H01L29/423 ; H01L29/78
Abstract:
A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench surrounded by the interlayer dielectric; depositing a dielectric layer and a work function layer on a surface of the trench sequentially and conformally; filling up the trench with a conductive layer; removing an upper portion of the conductive layer inside the trench; forming a protection film on a top surface of the interlayer dielectric and a top surface of the conductive layer through a directional deposition process; removing the dielectric layer exposed from the protection film; and forming a hard mask to cover the protection film.
Public/Granted literature
- US20150145027A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2015-05-28
Information query
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