Invention Grant
- Patent Title: Heavily doped metal oxides and methods for making the same
- Patent Title (中): 重掺杂金属氧化物和制造相同的方法
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Application No.: US12994437Application Date: 2009-05-13
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Publication No.: US09120088B2Publication Date: 2015-09-01
- Inventor: Qi Li , Jian-Ku Shang
- Applicant: Qi Li , Jian-Ku Shang
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Brinks Gilson & Lione
- International Application: PCT/US2009/043689 WO 20090513
- International Announcement: WO2009/148779 WO 20091210
- Main IPC: C01G23/047
- IPC: C01G23/047 ; B01J35/00 ; B01J21/06 ; B01J27/24 ; B01J37/02 ; B01J37/08 ; B01J37/34

Abstract:
A method of making a doped metal oxide includes heating a first doped metal oxide by rapid thermal annealing, to form a second doped metal oxide. The crystal structure of the second doped metal oxide is different from the crystal structure of the first doped metal oxide. The method may provide a doped titanium oxide, where the atomic ratio of dopant nonmetal to titanium is from 2% to 20%, and at least 10% of the doped titanium oxide is in the rutile phase. The method also can provide a doped tin oxide, where the atomic ratio of dopant nonmetal to tin is from 2% to 20%, and at least 50% of 900 the doped tin oxide is in the rutile phase.
Public/Granted literature
- US20110301018A1 HEAVILY DOPED METAL OXIDES AND METHODS FOR MAKING THE SAME Public/Granted day:2011-12-08
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