Invention Grant
US09120117B2 Polylactide/silicon-containing block copolymers for nanolithography
有权
用于纳米光刻的聚丙交酯/含硅嵌段共聚物
- Patent Title: Polylactide/silicon-containing block copolymers for nanolithography
- Patent Title (中): 用于纳米光刻的聚丙交酯/含硅嵌段共聚物
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Application No.: US13761763Application Date: 2013-02-07
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Publication No.: US09120117B2Publication Date: 2015-09-01
- Inventor: Christopher John Ellison , Carlton Grant Willson , Julia Cushen , Christopher M. Bates
- Applicant: Christopher John Ellison , Carlton Grant Willson , Julia Cushen , Christopher M. Bates
- Applicant Address: US TX Austin
- Assignee: Board of Regents, The University of Texas System
- Current Assignee: Board of Regents, The University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Medlen & Carroll, LLP
- Main IPC: B05D1/00
- IPC: B05D1/00 ; B05D3/00 ; B05D5/00 ; B05C21/00 ; C08G63/695 ; C08F112/14 ; G03F7/00 ; B82Y10/00 ; B82Y40/00
Abstract:
A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.
Public/Granted literature
- US20130266780A1 Polylactide/Silicon-containing Block Copolymers for Nanolithography Public/Granted day:2013-10-10
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