Invention Grant
- Patent Title: Electron beam-induced etching
- Patent Title (中): 电子束诱导蚀刻
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Application No.: US13914312Application Date: 2013-06-10
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Publication No.: US09123506B2Publication Date: 2015-09-01
- Inventor: Aiden Martin , Milos Toth
- Applicant: FEI Company
- Applicant Address: US OR HILLSBORO
- Assignee: FEI COMPANY
- Current Assignee: FEI COMPANY
- Current Assignee Address: US OR HILLSBORO
- Agency: Scheinberg & Associates
- Agent Michael O. Scheinberg; John E. Hillert
- Main IPC: H01J37/305
- IPC: H01J37/305 ; C23F4/02 ; H01L21/3065 ; H01J37/30
Abstract:
Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
Public/Granted literature
- US20140363978A1 Electron Beam-Induced Etching Public/Granted day:2014-12-11
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