Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
- Patent Title (中): 半导体装置的制造方法,基板处理方法及基板处理装置
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Application No.: US14006819Application Date: 2012-03-07
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Publication No.: US09123530B2Publication Date: 2015-09-01
- Inventor: Yosuke Ota , Yoshiro Hirose
- Applicant: Yosuke Ota , Yoshiro Hirose
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-064726 20110323
- International Application: PCT/JP2012/055832 WO 20120307
- International Announcement: WO2012/128044 WO 20120927
- Main IPC: C23C16/36
- IPC: C23C16/36 ; C23C16/455 ; B05C11/00 ; H01L21/314 ; H01L21/31 ; H01L21/02 ; C23C16/30 ; C23C16/40

Abstract:
Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
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