Invention Grant
US09123530B2 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus 有权
半导体装置的制造方法,基板处理方法及基板处理装置

Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
Abstract:
Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
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