Provided is a non-volatile memory device having a zigzag body wiring. A well is disposed in a substrate. Word lines are arranged in an array, are disposed on the substrate and extend in a first direction. Inter-poly dielectric films are respectively between the substrate and the word lines. Floating gates are respectively disposed between the well and the inter-poly dielectric films. Tunnel oxide films are respectively disposed between the well and the floating gates. First bit lines and second bit lines, arranged periodically, are disposed over the word lines and extend in a second direction, wherein a first distance from the first bit lines to the substrate is smaller than a second distance from the second bit lines to the substrate.