Invention Grant
- Patent Title: Method for spatially determining the series resistance of a semiconductor structure
- Patent Title (中): 用于空间确定半导体结构的串联电阻的方法
-
Application No.: US13321404Application Date: 2010-05-17
-
Publication No.: US09124214B2Publication Date: 2015-09-01
- Inventor: Jonas Haunschild , Markus Glatthaar , Stefan Rein
- Applicant: Jonas Haunschild , Markus Glatthaar , Stefan Rein
- Applicant Address: DE München DE Freiburg
- Assignee: Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V.,Albert-Ludwigs-Universität Freiburg
- Current Assignee: Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V.,Albert-Ludwigs-Universität Freiburg
- Current Assignee Address: DE München DE Freiburg
- Agency: Volpe and Koenig, P.C.
- Priority: DE102009021799 20090518
- International Application: PCT/EP2010/002997 WO 20100517
- International Announcement: WO2010/133325 WO 20101125
- Main IPC: G01J1/02
- IPC: G01J1/02 ; G01J3/50 ; H02S50/10 ; G01N21/64 ; G01N21/66
Abstract:
A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.
Public/Granted literature
- US20120113415A1 METHOD FOR SPATIALLY DETERMINING THE SERIES RESISTANCE OF A SEMICONDUCTOR STRUCTURE Public/Granted day:2012-05-10
Information query
