Invention Grant
US09126285B2 Laser and plasma etch wafer dicing using physically-removable mask
有权
使用物理可移除的掩模的激光和等离子体蚀刻晶片切割
- Patent Title: Laser and plasma etch wafer dicing using physically-removable mask
- Patent Title (中): 使用物理可移除的掩模的激光和等离子体蚀刻晶片切割
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Application No.: US13161036Application Date: 2011-06-15
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Publication No.: US09126285B2Publication Date: 2015-09-08
- Inventor: Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
- Applicant: Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; B23K26/06 ; H01L21/78 ; H01L21/308 ; H01L21/311 ; B23K26/36 ; B23K26/40

Abstract:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits.
Public/Granted literature
- US20120322237A1 LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK Public/Granted day:2012-12-20
Information query
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