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US09126285B2 Laser and plasma etch wafer dicing using physically-removable mask 有权
使用物理可移除的掩模的激光和等离子体蚀刻晶片切割

Laser and plasma etch wafer dicing using physically-removable mask
Abstract:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits.
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