A memory including a memory cell and first and second modules. The memory cell has first and second states, where the second state is different than the first state. The first module, subsequent to an initial forming of the memory cell and subsequent to a read cycle or a write cycle of the memory cell, determines a first difference between the first state and a first predetermined threshold or a second difference between the first state and the second state. The second module, subsequent to the first module determining the first difference or the second difference, reforms the memory cell to reset and increase the first difference or the second difference. The second module, during the reforming of the memory cell, applies a first voltage to the memory cell. The first voltage is greater than a voltage applied to the memory cell during the read cycle or the write cycle.