Invention Grant
- Patent Title: Amorphous oxide and field effect transistor
- Patent Title (中): 无定形氧化物和场效应晶体管
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Application No.: US13923009Application Date: 2013-06-20
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Publication No.: US09130049B2Publication Date: 2015-09-08
- Inventor: Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
- Applicant: CANON KABUSHIKI KAISHA , TOKYO INSTITUTE OF TECHNOLOGY
- Applicant Address: JP Tokyo JP Tokyo JP Kawaguchi-shi
- Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology,Japan Science and Technology Agency
- Current Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology,Japan Science and Technology Agency
- Current Assignee Address: JP Tokyo JP Tokyo JP Kawaguchi-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-326687 20041110
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/786 ; H01L21/428 ; H01L21/02
Abstract:
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Public/Granted literature
- US20130277672A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR Public/Granted day:2013-10-24
Information query
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