Invention Grant
- Patent Title: Drive circuit for semiconductor device
- Patent Title (中): 半导体器件驱动电路
-
Application No.: US14244366Application Date: 2014-04-03
-
Publication No.: US09130546B2Publication Date: 2015-09-08
- Inventor: Masayoshi Utani , Mitsutaka Hano
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-155543 20130726
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/012 ; H03K17/687 ; H02M1/08

Abstract:
A drive circuit is provided with an input terminal for receiving input signals, an output terminal that outputs drive signals generated from the input signals, a control power supply terminal that receives a control power supply voltage, an output terminal that outputs an output signal, and a reset terminal that receives a reset signal. The output signal is given to a gate of a MOSFET. A secondary side circuit and a MOSFET constitute a step-down chopper circuit, which steps down a voltage through duty ratio control of the gate drive signal and generates a control power supply voltage. Upon receipt of a reset signal, the drive circuit stops outputting the drive signal and changes the output signal so as to reduce the control power supply voltage VCC.
Public/Granted literature
- US20150028925A1 DRIVE CIRCUIT FOR SEMICONDUCTOR DEVICE Public/Granted day:2015-01-29
Information query