Invention Grant
US09134074B2 Method and apparatus for thermal control of ion sources and sputtering targets
有权
用于离子源和溅射靶的热控制的方法和装置
- Patent Title: Method and apparatus for thermal control of ion sources and sputtering targets
- Patent Title (中): 用于离子源和溅射靶的热控制的方法和装置
-
Application No.: US13645006Application Date: 2012-10-04
-
Publication No.: US09134074B2Publication Date: 2015-09-15
- Inventor: Neil J. Bassom
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee Address: US MA Gloucester
- Agency: Kacvinsky Daisak Bluni PLLC
- Main IPC: H01J27/08
- IPC: H01J27/08 ; F28D15/04 ; F28D15/02 ; H01J37/02 ; H01J37/317

Abstract:
A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.
Public/Granted literature
- US20140099782A1 METHOD AND APPARATUS FOR THERMAL CONTROL OF ION SOURCES AND SPUTTERING TARGETS Public/Granted day:2014-04-10
Information query