Methods for stiction reduction in MEMS sensors

Invention Grant

US09136165B2 Methods for stiction reduction in MEMS sensors 有权

Title translation: MEMS传感器静摩擦方法

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Patent Title: Methods for stiction reduction in MEMS sensors
Patent Title (中): MEMS传感器静摩擦方法
Application No.: US13909842

Application Date: 2013-06-04
Publication No.: US09136165B2

Publication Date: 2015-09-15
Inventor: Cerina Zhang , Nim Tea
Applicant: Invensense, Inc.
Applicant Address: US CA San Jose
Assignee: INVENSENSE, INC.
Current Assignee: INVENSENSE, INC.
Current Assignee Address: US CA San Jose
Agency: IPxLaw Group LLP
Agent Maryam Imam
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L23/48

Methods for stiction reduction in MEMS sensors

Abstract:

A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

Abstract(Chinese):

本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。通过在衬底上沉积和图案化介电材料形成凹凸块，并且通过沉积在凸块上的导电层提供导电路径。导电层也可以被粗糙化以减少粘性。

Public/Granted literature

US20140353774A1 METHODS FOR STICTION REDUCTION IN MEMS SENSORS Public/Granted day:2014-12-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流