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公开(公告)号:US09136165B2
公开(公告)日:2015-09-15
申请号:US13909842
申请日:2013-06-04
Applicant: Invensense, Inc.
Inventor: Cerina Zhang , Nim Tea
IPC: H01L21/768 , H01L23/48
CPC classification number: B81C1/00984 , B81B3/0008 , B81B2207/015 , B81C1/00976 , B81C2201/115 , H01L21/76838 , H01L23/48 , H01L2924/0002 , H01L2924/00
Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.
Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块,并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。
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公开(公告)号:US09926192B2
公开(公告)日:2018-03-27
申请号:US14827214
申请日:2015-08-14
Applicant: Invensense, Inc.
Inventor: Cerina Zhang , Nim Tea
IPC: H01L21/44 , B81C1/00 , H01L21/768 , H01L23/48 , B81B3/00
CPC classification number: B81C1/00984 , B81B3/0008 , B81B2207/015 , B81C1/00976 , B81C2201/115 , H01L21/76838 , H01L23/48 , H01L2924/0002 , H01L2924/00
Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.
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公开(公告)号:US20140353774A1
公开(公告)日:2014-12-04
申请号:US13909842
申请日:2013-06-04
Applicant: Invensense, Inc.
Inventor: Cerina Zhang , Nim Tea
IPC: H01L21/768 , H01L23/48 , H01L29/84
CPC classification number: B81C1/00984 , B81B3/0008 , B81B2207/015 , B81C1/00976 , B81C2201/115 , H01L21/76838 , H01L23/48 , H01L2924/0002 , H01L2924/00
Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.
Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块,并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。
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公开(公告)号:US20150353353A1
公开(公告)日:2015-12-10
申请号:US14827214
申请日:2015-08-14
Applicant: Invensense, Inc.
Inventor: Cerina Zhang , Nim Tea
IPC: B81C1/00
CPC classification number: B81C1/00984 , B81B3/0008 , B81B2207/015 , B81C1/00976 , B81C2201/115 , H01L21/76838 , H01L23/48 , H01L2924/0002 , H01L2924/00
Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.
Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块,并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。
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