Invention Grant
- Patent Title: Defect inspection method and device therefor
- Patent Title (中): 缺陷检查方法及其设备
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Application No.: US13881378Application Date: 2011-10-26
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Publication No.: US09148631B2Publication Date: 2015-09-29
- Inventor: Makoto Ono , Takafumi Chida , Takehiro Hirai , Masakazu Kanezawa
- Applicant: Makoto Ono , Takafumi Chida , Takehiro Hirai , Masakazu Kanezawa
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2010-242181 20101028
- International Application: PCT/JP2011/074721 WO 20111026
- International Announcement: WO2012/057230 WO 20120503
- Main IPC: H04N7/18
- IPC: H04N7/18 ; H01J37/28 ; G01N23/225

Abstract:
In imaging a sample using an electron microscope, in order to reduce a time for focusing, a scanning range of a Z coordinate is reduced to complete focusing by obtaining SEM images such that: for a first predetermined number of portions, focal positions of an electron beam in obtaining each SEM image are moved in a predetermined range; then, a curved surface shape of the surface of the sample is estimated by using information relating to the focal positions of the electron beam in the first predetermined number of portions; after the images are taken, the range in which the focal positions of the electron beam are moved for scanning the electron beam on the surface of the sample is made to be narrower than the predetermined range by using the curved surface information estimated, thereby performing scanning to take the images of the sample.
Public/Granted literature
- US20130235182A1 DEFECT INSPECTION METHOD AND DEVICE THEREFOR Public/Granted day:2013-09-12
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