Invention Grant
US09165998B2 Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process
有权
在PECVD工艺中具有良好粘合强度的粘合层以最小化介电常数增加
- Patent Title: Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process
- Patent Title (中): 在PECVD工艺中具有良好粘合强度的粘合层以最小化介电常数增加
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Application No.: US14213038Application Date: 2014-03-14
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Publication No.: US09165998B2Publication Date: 2015-10-20
- Inventor: Kang Sub Yim , Pendar Ardalan , Sure Ngo , Alexandros T. Demos
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L29/06 ; H01L21/02 ; C23C16/40 ; C23C16/455 ; C23C16/505 ; H01L21/768
Abstract:
Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.
Public/Granted literature
- US20140264780A1 ADHESION LAYER TO MINIMIZE DIELECTRIC CONSTANT INCREASE WITH GOOD ADHESION STRENGTH IN A PECVD PROCESS Public/Granted day:2014-09-18
Information query
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