公开(公告)号：US10553427B2

公开(公告)日：2020-02-04

申请号：US15958747

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Kang Sub Yim ,  Zhijun Jiang ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/24 ,  C23C16/505 ,  C23C28/00 ,  C23C28/04

Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.

公开(公告)号：US20160141203A1

公开(公告)日：2016-05-19

申请号：US14822313

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： MEI-YEE SHEK ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US20220108884A1

公开(公告)日：2022-04-07

申请号：US17063358

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Ruitong Xiong ,  Sure Ngo ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02

Abstract: Semiconductor processing methods are described for forming UV-treated, low-κ dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.

公开(公告)号：US09312167B1

公开(公告)日：2016-04-12

申请号：US14505731

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Taewan Kim ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: H01L21/76 ,  H01L21/764 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02274 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02312 ,  H01L21/7682 ,  H01L21/76885 ,  H01L2221/1047

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Abstract translation: 本文公开了使用气隙降低层的k值的方法和由所述方法制造的装置。 本文公开的方法可以包括在衬底中的一个或多个特征上沉积含碳堆叠，在含碳堆叠之上沉积多孔介电层，以及固化衬底以使含碳堆叠挥发。 所得到的器件包括其中形成有一个或多个特征的衬底，在特征上形成的多孔介电层，其中形成有特征中的气隙。

公开(公告)号：US12119223B2

公开(公告)日：2024-10-15

申请号：US17624009

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Ruitong Xiong ,  Sure K. Ngo ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02348 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274

Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.

公开(公告)号：US11594409B2

公开(公告)日：2023-02-28

申请号：US16902888

申请日：2020-06-16

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：US09850574B2

公开(公告)日：2017-12-26

申请号：US14623357

申请日：2015-02-16

Applicant: Applied Materials, Inc.

Inventor： Taewan Kim ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: C23C16/30 ,  C23C14/28 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

Abstract: A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.

公开(公告)号：US09659765B2

公开(公告)日：2017-05-23

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Mahendra Chhabra ,  Kelvin Chan ,  Alexandros T. Demos ,  Priyanka Dash

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

公开(公告)号：US12198925B2

公开(公告)日：2025-01-14

申请号：US18074849

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：US20230142684A1

公开(公告)日：2023-05-11

申请号：US17624009

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Ruitong Xiong ,  Sure K. Ngo ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/02348 ,  C23C16/505 ,  C23C16/56 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274

Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.