Invention Grant
- Patent Title: Semiconductor device and method for manufacturing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13752670Application Date: 2013-01-29
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Publication No.: US09171777B2Publication Date: 2015-10-27
- Inventor: Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/58 ; H01L21/66

Abstract:
A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Public/Granted literature
- US20140167044A1 Semiconductor Device and Method for Manufacturing a Semiconductor Device Public/Granted day:2014-06-19
Information query
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