Invention Grant
- Patent Title: Deep ultraviolet light emitting diode
- Patent Title (中): 深紫外线发光二极管
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Application No.: US14514586Application Date: 2014-10-15
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Publication No.: US09184339B2Publication Date: 2015-11-10
- Inventor: Remigijus Gaska , Maxim S Shatalov , Michael Shur , Alexander Dobrinsky
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; H01L33/04 ; H01L33/06 ; H01L33/10 ; G06F17/50 ; H01L33/22 ; H01L33/38 ; H01L33/40
Abstract:
A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
Public/Granted literature
- US20150064822A1 Deep Ultraviolet Light Emitting Diode Public/Granted day:2015-03-05
Information query
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