Invention Grant
- Patent Title: Ultraviolet reflective contact
- Patent Title (中): 紫外反射接触
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Application No.: US13711675Application Date: 2012-12-12
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Publication No.: US09184346B2Publication Date: 2015-11-10
- Inventor: Alexander Lunev , Alexander Dobrinsky , Maxim S. Shatalov , Remigijus Gaska , Michael Shur
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/32 ; H01L29/45 ; H01L29/20 ; H01L33/42 ; H01L33/40
Abstract:
A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
Public/Granted literature
- US20130146907A1 Ultraviolet Reflective Contact Public/Granted day:2013-06-13
Information query
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